LEARNING BEFORE ERRING: THE INFLUENCE OF DIELECTRIC MATERIALS TO PURSUE MOORE’S LAW
DOI:
https://doi.org/10.23055/ijietap.2009.16.2.73Keywords:
Moore’s Law, gate leakage current density, high-k dielectric material, low-powered devicesAbstract
The semiconductor industry’s ambitious scaling trends provide important guidelines for development by integrating knowledge from the past to self-correct its course. This paper illustrates this phenomenon by investigating the recent crises of static power losses in transistor structures. The impact of the power leaked through a device’s drain has led to a drastic change in dielectric materials used, where silicon dioxide (SiO2) insulators have been replaced with novel high-k dielectric constant materials. However, quantifiable evidence, which has emerged recently in research, suggests that even these new materials may not be sufficient to continue the scaling trajectory expected of Moore’s Law, especially for low-powered devices. Based on industrial learning achieved from past trends, data collected for new dielectric materials, such as hafnium dioxide (HfO2), and implied device scaling using Moore’s Law, analysis suggests that current stand-by leakage limits will be breached in the near future.Downloads
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